| Author |
Title |
Year |
Publication  |
Volume |
Pages |
| Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
| Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
61 |
591-595 |
| Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
1989 |
JETP Lett. |
50 |
283-286 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
1987 |
JETP Lett. |
46 |
237-238 |
