| |
Author |
Title  |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
|
|
|
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
2002 |
Mater. Sci. Forum |
384-3 |
107-116 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
|
|
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Effect of a high magnetic field on the spectrum of donors in InSb |
1977 |
Fizika i Tekhnika Poluprovodnikov |
11 |
2373-2375 |
|
|
|
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
Effect of a strong magnetic field on the spectrum of donors in InSb |
1978 |
Sov. Phys. Semicond. |
11 |
1395-1397 |
|
