| Author |
Title |
Year |
Publication |
Volume  |
Pages |
| Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
1988 |
Fizika Nizkikh Temperatur |
14 |
753-763 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
| Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
| Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
Effect of a strong magnetic field on the spectrum of donors in InSb |
1978 |
Sov. Phys. Semicond. |
11 |
1395-1397 |
