| Author |
Title |
Year |
Publication |
Volume |
Pages  |
| Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
| Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. |
A high resolution spectrometer for the investigation of molecular structures in the THZ range |
1999 |
Proc. 10th Int. Symp. Space Terahertz Technol. |
|
530-538 |
| Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
| Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Electron-phonon interaction in ultrathin Nb films |
1990 |
Sov. Phys. JETP |
70 |
505-511 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
1990 |
Solid State Communications |
76 |
493-497 |
