Author  |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. |
Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials |
1992 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
5 |
1129-1140 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
1987 |
JETP Lett. |
46 |
237-238 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. |
Submillimeter backward-wave-tube spectrometer-relaxometer |
1987 |
Pribory i Tekhnika Eksperimenta |
30 |
131-137 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of electron and hole binding into excitons in germanium |
1983 |
Sov. Phys. JETP |
57 |
369-376 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
33 |
574 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
1991 |
Phys. B Condens. Mat. |
169 |
629-630 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
1990 |
Solid State Communications |
75 |
639-641 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
