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Author Title (up) Year Publication Volume Pages
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium 1986 Sov. Phys. JETP 64 889-897
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595
Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. Electron-phonon interaction in disordered NbN films 1994 Phys. B Condens. Mat. 194-196 1355-1356
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. Electron-phonon scattering rate in impure NbC films 1998 NASA/ADS Y35.08
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity 1996 Czech. J. Phys. 46 857-858