| Author |
Title |
Year |
Publication  |
Volume |
Pages |
| Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
| Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
| Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
48 |
671-675 |
| Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
Noise equivalent temperature difference of a superconducting integrated terahertz receiver |
2009 |
J. Commun. Technol. Electron. |
54 |
716-720 |
