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Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. Dielectric characteristics of ore minerals in a 10–40 GHz frequency range 2008 Tech. Phys. Lett. 34 967-970 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. Effect of a strong magnetic field on the spectrum of donors in InSb 1978 Sov. Phys. Semicond. 11 1395-1397 details   url
Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films 1991 IEEE Trans. Magn. 27 1317-1320 details   doi
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
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