|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. |
Dielectric characteristics of ore minerals in a 10–40 GHz frequency range |
2008 |
Tech. Phys. Lett. |
34 |
967-970 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
|
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
Effect of a strong magnetic field on the spectrum of donors in InSb |
1978 |
Sov. Phys. Semicond. |
11 |
1395-1397 |
|
|
Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
1991 |
IEEE Trans. Magn. |
27 |
1317-1320 |
|
|
Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
|