| |
Author |
Title |
Year |
Publication  |
Volume |
Pages |
Links |
|
|
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
2003 |
Microelectronic Engineering |
69 |
274-278 |
|
|
|
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Generation of nanosecond terahertz pulses by the optical rectification method |
2012 |
JETP Lett. |
96 |
94-97 |
|
|
|
Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
|
|
|
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
