| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links  |
|
|
Tikhonov, V. V.; Polyakova, O. N.; Gol’tsman, G. N.; Dzardanov, A. L.; Boyarskiy, D. A. |
Determination of dielectric properties of ore minerals in the microwave band |
2008 |
Radiophys. Quant. Electron. |
51 |
966-974 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
|
|
|
Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
1997 |
Tech. Phys. Lett. |
23 |
486-488 |
|
|
|
Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
