| |
Author |
Title |
Year |
Publication |
Volume |
Pages  |
Links |
|
|
Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
2018 |
Radiophys. Quant. Electron. |
60 |
988-992 |
|
|
|
Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. |
Ultrafast superconducting bolometer receivers for terahertz applications |
2009 |
Proc. PIERS |
|
867 |
|
|
|
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |
|
|
|
Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
2019 |
PIERS-Spring |
|
745-751 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
|
