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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. Investigation of excited donor states in GaAs 1974 Sov. Phys. Semicond. 7 1248-1250 details   url
Gershenzon, E. M.; Goltsman, G. N. Zeeman effect in excited-states of donors in germanium 1972 Sov. Phys. Semicond. 6 509 details   url
Kahl, O.; Ferrari, S.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths 2015 Sci. Rep. 5 10941 (1 to 11) details   doi
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts 2018 Materials Today: Proc. 5 27301-27306 details   doi
Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits 2012 Nat. Commun. 3 1325 (1 to 10) details   doi
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