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Author Title Year (up) Publication Volume Pages
Gershenzon, E. M.; Goltsman, G. N. Zeeman effect in excited-states of donors in germanium 1972 Sov. Phys. Semicond. 6 509
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. Investigation of excited donor states in GaAs 1974 Sov. Phys. Semicond. 7 1248-1250
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors 631-634
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1231-1234
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of submillimeter impurity and exciton photoconduction in Ge 1982 Optics and Spectroscopy 52 454-455