| Author |
Title |
Year |
Publication |
Volume |
Pages  |
| Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |
| Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
2019 |
PIERS-Spring |
|
745-751 |
| Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
| Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. |
Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz |
2004 |
Proc. 5-th MSMW |
2 |
592-594 |
| Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. |
Hot-electron bolometer mixers with in situ contacts |
2014 |
Radiophys. Quant. Electron. |
56 |
591-598 |
