| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
|
|
|
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
2019 |
AIP Advances |
9 |
105220 |
|
|
|
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Germanium hot-electron narrow-band detector |
1971 |
Sov. Radio Engineering And Electronic Physics |
16 |
1346 |
|
|
|
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
1986 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
50 |
280-281 |
|
|
|
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |
|
