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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Silicon room temperature IR detectors coated with Ag2S quantum dots 2019 Proc. IWQO 369-371 details   url
Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G. Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing 2018 J. Phys.: Conf. Ser. 1124 051051 details   doi
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation 2020 J. Phys.: Conf. Ser. 1695 012118 details   doi
Samsonova, A. S.; Zolotov, P. I.; Baeva, E. M.; Lomakin, A. I.; Titova, N. A.; Kardakova, A. I.; Goltsman, G. N. Signatures of surface magnetic disorder in niobium films 2021 IEEE Trans. Appl. Supercond. 31 1-5 details   doi
Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator 2018 Radiophys. Quant. Electron. 60 988-992 details   doi
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