| |
Author |
Title  |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |
|
|
|
Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs |
2015 |
EPJ Web of Conferences |
103 |
10004 (1 to 2) |
|
|
|
Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
2015 |
IEEE Trans. Appl. Supercond. |
25 |
1-4 |
|
|
|
Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
Electron-phonon relaxation time in ultrathin tungsten silicon film |
2018 |
arXiv |
|
|
|
|
|
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Electron-phonon interaction in ultrathin Nb films |
1990 |
Sov. Phys. JETP |
70 |
505-511 |
|
