| |
Author |
Title |
Year |
Publication |
Volume  |
Pages |
Links |
|
|
Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. |
Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures |
2020 |
J. Phys.: Conf. Ser. |
1695 |
012190 |
|
|
|
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
|
|
|
Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
2015 |
J. Appl. Phys. |
118 |
194303 |
|
|
|
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
Universal bottleneck for thermal relaxation in disordered metallic films |
2020 |
JETP Lett. |
111 |
104-108 |
|
|
|
Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
2013 |
Appl. Phys. Lett. |
103 |
252602 (1 to 4) |
|
