Author  |
Title |
Year |
Publication |
Volume |
Pages |
| Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers |
2015 |
Proc. 26th Int. Symp. Space Terahertz Technol. |
|
39 |
| Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
2019 |
Phys. Status Solidi RRL |
13 |
1900187-(1-6) |
| Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
2019 |
Proc. IWQO |
|
369-371 |
| Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
2019 |
IRMMW-THz |
|
|
| Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
2020 |
Nanomaterials (Basel) |
10 |
1-12 |
| Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. |
About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers |
2018 |
Proc. 29th Int. Symp. Space Terahertz Technol. |
|
113 |
| Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. |
Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer |
2010 |
Tech. Phys. Lett. |
36 |
1103-1105 |
| Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
2017 |
IEEE Trans. Appl. Supercond. |
27 |
6 |
| Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
2017 |
IEEE Trans. Appl. Supercond. |
27 |
1-5 |
| Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Photon absorption near the gap frequency in a hot electron bolometer |
2017 |
IEEE Trans. Appl. Supercond. |
27 |
1-4 |
| Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Gap frequency and photon absorption in a hot electron bolometer |
2016 |
Proc. 27th Int. Symp. Space Terahertz Technol. |
|
121 |
| Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz |
2004 |
Proc. 15th Int. Symp. Space Terahertz Technol. |
|
236-241 |
| Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
2006 |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
2 |
688-689 |
| Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
2004 |
Proc. 29th IRMMW / 12th THz |
|
329-330 |
| Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
48 |
671-675 |
