Author |
Title |
Year |
Publication |
Volume |
Pages |
Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R. |
Optimization of the intermediate frequency bandwidth in the THz HEB mixers |
2014 |
Proc. 25th Int. Symp. Space Terahertz Technol. |
|
54 |
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
On chip carbon nanotube tunneling spectroscopy |
2020 |
Fullerenes, Nanotubes and Carbon Nanostructures |
28 |
50-53 |
Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers |
2015 |
Proc. 26th Int. Symp. Space Terahertz Technol. |
|
39 |
Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory |
Nanosecond, transient resistive state in two-dimensional superconducting stripes |
2006 |
Proc. APS March Meeting |
|
H38.13 |
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |