| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
| Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. |
Input bandwidth of hot electron bolometer with spiral antenna |
2012 |
IEEE Trans. THz Sci. Technol. |
2 |
400-405 |
| Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
Electron energy relaxation in disordered superconducting NbN films |
2020 |
Phys. Rev. B |
102 |
054501 (1 to 15) |
| Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
On chip carbon nanotube tunneling spectroscopy |
2020 |
Fullerenes, Nanotubes and Carbon Nanostructures |
28 |
50-53 |
| Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
2019 |
Supercond. Sci. Technol. |
32 |
075003 |
