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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. Helicity-sensitive plasmonic terahertz interferometer 2020 Nano Lett. 20 7296-7303 details   doi
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Room temperature silicon detector for IR range coated with Ag2S quantum dots 2019 Phys. Status Solidi RRL 13 1900187-(1-6) details   doi
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Silicon room temperature IR detectors coated with Ag2S quantum dots 2019 Proc. IWQO 369-371 details   url
Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform 2019 EPJ Web Conf. 220 03012 details   doi
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer 2019 Supercond. Sci. Technol. 32 075003 details   doi
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