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Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV) 2018 J. Phys.: Conf. Ser. 1124 051046 (1 to 4) details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements 2011 Semicond. Sci. Technol. 26 025013 details   doi
Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps 2016 Integrated Optics: Devices, Mat. Technol. XX 9750 135-142 details   doi
Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires 2015 Appl. Phys. Lett. 106 151101 (1 to 5) details   doi
Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits 2013 Opt. Express 21 22683-22692 details   doi
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