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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency 2017 Proc. 28th Int. Symp. Space Terahertz Technol. 147-148 details   openurl
Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method 2016 Proc. 27th Int. Symp. Space Terahertz Technol. 30-32 details   url
Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator 2003 IEEE MTT-S Int. Microwave Symp. Digest 2 751-754 details   doi
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers 2017 IEEE Trans. Terahertz Sci. Technol. 7 53-59 details   doi
Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer 2003 IEEE Trans. Appl. Supercond. 13 164-167 details   doi
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