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Author Title (down) Year Publication Volume Pages
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 7 2000872
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. Helicity-sensitive plasmonic terahertz interferometer 2020 Nano Lett. 20 7296-7303
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 1124 051054
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Graphene-based lateral Schottky diodes for detecting terahertz radiation 2018 Proc. Optical Sensing and Detection V 10680 30-39
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors 2018 Appl. Phys. Lett. 112 141101 (1 to 5)