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Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields 1972 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 6 362-363 details   url
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data 1996 J. of Communications Technology and Electronics 41 408-414 details   url
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films 1996 Czech J. Phys. 46 2489-2490 details   doi
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors 1983 Sov. Phys. Semicond. 17 908-913 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of electron and hole binding into excitons in germanium 1983 Sov. Phys. JETP 57 369-376 details   url
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