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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Observation of the free-exciton spectrum at submillimeter wavelengths 1972 JETP Lett. 16 161-162 details   url
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data 1996 J. of Communications Technology and Electronics 41 408-414 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Population and lifetime of excited states of shallow impurities in Ge 1979 Sov. Phys. JETP 49 355-362 details   url
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions 1976 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 10 1379-1383 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Submillimeter spectroscopy of semiconductors 1973 Sov. Phys. JETP 37 299-304 details   url
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. The excitonic Zeeman effect in uniaxially-strained germanium 1987 Sov. Phys. JETP 65 1233-1241 details   url
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors 1983 Sov. Phys. Semicond. 17 908-913 details   url
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