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Author (up) Title Year Publication Volume Pages
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium 1971 JETP Lett. 14 241
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. Capture of photoexcited carriers by shallow impurity centers in germanium 1979 Sov. Phys. JETP 50 728-734
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. Investigation of excited donor states in GaAs 1974 Sov. Phys. Semicond. 7 1248-1250
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. Carrier lifetime in excited states of shallow impurities in germanium 1977 JETP Lett. 25 539-543
Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M. AC losses and submillimeter absorption in single crystals La2CuO4 1990 Phys. B Condens. Mat. 165-166 1269-1270