Author  |
Title |
Year |
Publication |
Volume |
Pages |
| Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
Technology for NbN HEB based multipixel matrix of THz range |
2018 |
EPJ Web Conf. |
195 |
05011 |
| Tretyakov, I. V.; Ryabchun, S. A.; Maslennikov, S. N.; Finkel, M. I.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G.N. |
NbN HEB mixer: fabrication, noise temperature reduction and characterization |
2008 |
Proc. Basic problems of superconductivity |
|
|
| Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. |
Hot-electron bolometer mixers with in situ contacts |
2014 |
Radiophys. Quant. Electron. |
56 |
591-598 |
| Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
2018 |
Radiophys. Quant. Electron. |
60 |
988-992 |
| Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
