| Author |
Title |
Year |
Publication  |
Volume |
Pages |
| Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
| Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
2019 |
IRMMW-THz |
|
|
| Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
Technology for NbN HEB based multipixel matrix of THz range |
2018 |
EPJ Web Conf. |
195 |
05011 |
| Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
2017 |
EPJ Web Conf. |
132 |
02001 (1 to 2) |
| Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
2016 |
Appl. Phys. Lett. |
109 |
132602 |
