| Author |
Title |
Year |
Publication  |
Volume |
Pages |
| Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
1998 |
Appl. Phys. Lett. |
73 |
3938-3940 |
| Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
2010 |
Bull. Russ. Acad. Sci. Phys. |
74 |
100-102 |
| Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
1999 |
IEEE Trans. Appl. Supercond. |
9 |
3338-3341 |
| Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
