| Author |
Title |
Year |
Publication |
Volume  |
Pages |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
55-58 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
163-166 |
| Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
1999 |
IEEE Trans. Appl. Supercond. |
9 |
3338-3341 |
| Il'in, K. S.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
Infrared hot-electron NbN superconducting photodetectors for imaging applications |
1999 |
Supercond. Sci. Technol. |
12 |
755-758 |
| Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. |
Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements |
2011 |
Semicond. Sci. Technol. |
26 |
025013 |
