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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer 2003 J. of communications technol. & electronics 48 671-675 details   url
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Room temperature silicon detector for IR range coated with Ag2S quantum dots 2019 Phys. Status Solidi RRL 13 1900187-(1-6) details   doi
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 7 2000872 details   doi
Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. NbN nanowire superconducting single-photon detector for mid-infrared 2012 Phys. Procedia 36 72-76 details   doi
Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer 2012 Phys. Procedia 36 334-337 details   doi
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