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Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 195 26-31 details   doi
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits 2003 Microelectronic Engineering 69 274-278 details   doi
Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid 2020 J. Luminescence 220 117008 (1 to 7) details   doi
Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors 2015 Carbon 87 330-337 details   doi
Karasik, B.S.; Milostnaya, I.I.; Zorin, M.A.; Elantev, A.I.; Gol'tsman, G.N.; Gershenzon, E.M. Subnanosecond S-N and N-S switching of YBCO film induced by current pulse 1994 Phys. C: Supercond. 235-240 1981-1982 details   doi
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