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Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. Planar Schottky diode with a Γ-shaped anode suspended bridge 2020 J. Phys.: Conf. Ser. 1695 012154 details   doi
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector 2020 J. Phys.: Conf. Ser. 1695 012156 details   doi
Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures 2020 J. Phys.: Conf. Ser. 1695 012190 details   doi
Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit 2020 J. Phys.: Conf. Ser. 1695 012135 details   doi
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation 2020 J. Phys.: Conf. Ser. 1695 012118 details   doi
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