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Author |
Title |
Year |
Publication |
Volume |
Pages  |
Links |
|
|
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
2021 |
Adv. Electron. Mater. |
7 |
2000872 |
|
|
|
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
Electron heating in metallic resistors at sub-Kelvin temperature |
2007 |
Phys. Rev. B |
76 |
165426(1-9) |
|
|
|
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
|
|
|
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
Relaxation of the resistive superconducting state in boron-doped diamond films |
2016 |
Phys. Rev. B |
93 |
064506 |
|
|
|
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051054 |
|
