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Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts 2018 Materials Today: Proc. 5 27301-27306 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements 2011 Semicond. Sci. Technol. 26 025013 details   doi
Korneeva, Y. P.; Manova, N. N.; Florya, I. N.; Mikhailov, M. Y.; Dobrovolskiy, O. V.; Korneev, A. A.; Vodolazov, D. Y. Different single-photon response of wide and narrow superconducting MoxSi1−x strips 2020 Phys. Rev. Applied 13 024011 (1 to 7) details   doi
Shurakov, A.; Lobanov, Y.; Goltsman, G. Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications 2015 Supercond. Sci. Technol. 29 023001 details   doi
Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits 2013 Opt. Express 21 22683-22692 details   doi
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