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Polyakova, M. I.; Florya, I. N.; Semenov, A. V.; Korneev, A. A.; Goltsman, G. N. Extracting hot-spot correlation length from SNSPD tomography data 2019 J. Phys.: Conf. Ser. 1410 012166 (1 to 4) details   doi
Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures 2020 J. Phys.: Conf. Ser. 1695 012190 details   doi
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 1124 051054 details   doi
Feautrier, P.; le Coarer, E.; Espiau de Lamaestre, R.; Cavalier, P.; Maingault, L.; Villégier, J-C.; Frey, L.; Claudon, J.; Bergeard, N.; Tarkhov, M.; Poizat, J-P. High-speed superconducting single photon detectors for innovative astronomical applications 2008 J. Phys.: Conf. Ser. 97 10 details   openurl
Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films 2018 J. Phys.: Conf. Ser. 1124 051030 details   doi
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