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Author (up) Title Year Publication Volume Pages
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium 1971 JETP Lett. 14 241
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum 1987 JETP Lett. 46 237-238
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon 1971 JETP Lett. 14 185-186
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Observation of the free-exciton spectrum at submillimeter wavelengths 1972 JETP Lett. 16 161-162