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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574 details   url
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. Carrier lifetime in excited states of shallow impurities in germanium 1977 JETP Lett. 25 539-543 details   url
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
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