| Author |
Title |
Year |
Publication |
Volume |
Pages  |
| Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
| Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
2001 |
Jetp Lett. |
73 |
44-47 |
| Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
| Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Energy spectrum of free excitons in germanium |
1973 |
JETP Lett. |
18 |
93 |
| Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Generation of nanosecond terahertz pulses by the optical rectification method |
2012 |
JETP Lett. |
96 |
94-97 |
