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Author  |
Title | Year | Publication | Volume | Pages |
|---|---|---|---|---|---|
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. | Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K | 1996 | JETP Lett. | 64 | 404-409 |
| Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. | Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures | 1995 | JETP Lett. | 61 | 591-595 |