Author  |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
1983 |
Sov. Phys. Semicond. |
17 |
908-913 |
| Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
| Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
| Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
1976 |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
10 |
1379-1383 |
| Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. |
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure |
2005 |
Semicond. |
39 |
1082-1086 |
