| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
Hot electron mixers for THz applications |
1996 |
Proc. 30th ESLAB |
|
207-210 |
| Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M. |
Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
584-600 |
| Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. |
Superconductive NbN hot-electron bolometric mixer performance at 250 GHz |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
331-336 |
| Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
1996 |
Czech J. Phys. |
46 |
2489-2490 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
