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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer 2019 Supercond. Sci. Technol. 32 075003 details   doi
Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures 2019 Proc. Amorphous and Nanostructured Chalcogenides 47-48 details   url
Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Integration of nanodiamonds with NV-centers on optical silicon nitride structures 2019 EPJ Web Conf. 220 03013 details   doi
Moshkova, M.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K. Large active area superconducting single photon detector 2019 J. Phys.: Conf. Ser. 1410 012139 details   doi
Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform 2019 EPJ Web Conf. 220 03012 details   doi
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