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Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform 2019 EPJ Web Conf. 220 03012 details   doi
Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Integration of nanodiamonds with NV-centers on optical silicon nitride structures 2019 EPJ Web Conf. 220 03013 details   doi
Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. CMOS compatible nanoantenna-nanodiamond integration 2019 J. Phys.: Conf. Ser. 1410 012180 details   doi
Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV) 2018 J. Phys.: Conf. Ser. 1124 051046 (1 to 4) details   doi
Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit 2020 J. Phys.: Conf. Ser. 1695 012135 details   doi
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