| |
Author  |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
2016 |
Proc. 27th Int. Symp. Space Terahertz Technol. |
|
30-32 |
|
|
|
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
2017 |
IEEE Trans. Terahertz Sci. Technol. |
7 |
53-59 |
|
|
|
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
|
