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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors 1983 Sov. Phys. Semicond. 17 908-913 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of electron and hole binding into excitons in germanium 1983 Sov. Phys. JETP 57 369-376 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. Capture of photoexcited carriers by shallow impurity centers in germanium 1979 Sov. Phys. JETP 50 728-734 details   url
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of submillimeter impurity and exciton photoconduction in Ge 1982 Optics and Spectroscopy 52 454-455 details   url
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