2009 |
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Meledin D, Pavolotsky A, Desmaris V, Lapkin I, Risacher C, Perez V, et al. A 1.3-THz balanced waveguide HEB mixer for the APEX telescope. IEEE Trans. Microw. Theory Techn.. 2009;57(1):89–98.
Abstract: In this paper, we report about the development, fabrication, and characterization of a balanced waveguide hot electron bolometer (HEB) receiver for the Atacama Pathfinder EXperiment telescope covering the frequency band of 1.25–1.39 THz. The receiver uses a quadrature balanced scheme and two HEB mixers, fabricated from 4- to 5-nm-thick NbN film deposited on crystalline quartz substrate with an MgO buffer layer in between. We employed a novel micromachining method to produce all-metal waveguide parts at submicrometer accuracy (the main-mode waveguide dimensions are 90×180 μm). We present details on the mixer design and measurement results, including receiver noise performance, stability and “first-light†at the telescope site. The receiver yields a double-sideband noise temperature averaged over the RF band below 1200 K, and outstanding stability with a spectroscopic Allan time more than 200 s.
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Ryabchun S, Tong C-YE, Blundell R, Gol'tsman G. Stabilization scheme for hot-electron bolometer receivers using microwave radiation. IEEE Trans Appl Supercond. 2009;19(1):14–9.
Abstract: We present the results of a stabilization scheme for terahertz receivers based on NbN hot-electron bolometer (HEB) mixers that uses microwave radiation with a frequency much lower than the gap frequency of NbN to compensate for mixer current fluctuations. A feedback control loop, which actively controls the power level of the injected microwave radiation, has successfully been implemented to stabilize the operating point of the HEB mixer. This allows us to increase the receiver Allan time to 10 s and also improve the temperature resolution of the receiver by about 30% in the total power mode of operation.
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Ryabchun SA, Tretyakov IV, Finkel MI, Maslennikov SN, Kaurova NS, Seleznev VA, et al. NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling. In: Proc. 20th Int. Symp. Space Terahertz Technol. Charlottesville, USA; 2009. p. 151–4.
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Рябчун СА. Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN [Ph.D. thesis].; 2009.
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2008 |
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Cherednichenko S, Drakinskiy V. Low noise hot-electron bolometer mixers for terahertz frequencies. J Low Temp Phys. 2008;151(1-2):575–9.
Abstract: Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed.
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Ryabchun SA, Tretyakov IV, Finkel MI, Maslennikov SN, Kaurova NS, Seleznev VA, et al. Fabrication and characterisation of NbN HEB mixers with in situ gold contacts. In: Proc. 19th Int. Symp. Space Terahertz Technol. Groningen, Netherlands; 2008. p. 62–7.
Abstract: We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts.
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Tretyakov IV, Ryabchun SA, Maslennikov SN, Finkel MI, Kaurova NS, Seleznev VA, et al. NbN HEB mixer: fabrication, noise temperature reduction and characterization. In: Proc. Basic problems of superconductivity. Moscow-Zvenigorod; 2008.
Abstract: We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer.
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2007 |
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Cao A, Jiang L, Chen SH, Antipov SV, Shi SC. IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer. In: Proc. International conference on microwave and millimeter wave technology. Builin; 2007. p. 1–3.
Abstract: In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Cherednichenko S, Drakinskiy V, Baubert J, Krieg J-M, Voronov B, Gol'tsman G, et al. Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J Appl Phys. 2007;101(12):124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Cherednichenko S, Drakinskiy V, Berg T, Kollberg EL, Angelov I. The direct detection effect in the hot-electron bolometer mixer sensitivity calibration. IEEE Trans. Microw. Theory Techn.. 2007;55(3):504–10.
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